| PART |
Description |
Maker |
| BF909 BF909WR115 BF909WR135 |
N-channel dual gate MOS-FETs
|
NXP Semiconductors N.V.
|
| BF1109 BF1109R BF1109WR |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
| BF1105R |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
| BF904A BF904AR BF904AWR |
N-channel dual gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF1109WR BF1109R BF1109 BF1109_R_WR_2 |
N-channel dual-gate MOS-FETs
From old datasheet system
|
Philips
|
| 2SK1215 2SK1215D |
Silicon N-Channel MOS FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Silicon N Channel MOS FETs
|
HITACHI[Hitachi Semiconductor]
|
| BF994SA BF994SB BF994S BF994 |
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
CAP CER 47PF 50V 5% C0G 0603
|
Vishay Telefunken
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| BF908 BF908-R-2015 BF908-R-15 |
Dual-gate MOS-FETs
|
Quanzhou Jinmei Electro...
|
| BF1100R BF1100 |
Dual-gate MOS-FETs
|
NXP Semiconductors
|
| 2SK0665 2SK665 |
Silicon MOS FETs
From old datasheet system
Small-signal device - Small-signal FETs - MOS FETs
|
Panasonic Semiconductor
|
| BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
Vishay Telefunken
|
